LATEST DEVELOPMENTS
Newer storage devices are being developed out of electronic technology rather than the electromechanical technology of rotating or spinning devices. Bubble memories in which microscopic bubble patterns are formed on wafers of garnet crystal are available. These use the presence of absence of magnetic domains to represent the binary vales zero and one. Another new technology is the electron beam accessed memory (EBAM). This may become the fastest of the secondary memory devices, but it is not as well developed or readily available as bubble and CCD memories. The EBAM stores information by using an electronic beam to charge a small area on a silicon dioxide plane.
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