Silicon
Electron Configuration
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General Properties
| Atomic Symbol | Si |
| Atomic Weight | 28.0855 g/mol |
| Element Number | 14 |
| Standard State | Solid |
| Standard Type | Strongly Basic |
| Date of Discovery | 1823 |
| Discoverer | Berzelius |
Physical Properties
| Oxidation States | 4,2 |
| Boiling Point | 2630 K |
| Melting Point | 1683 K |
| Density | 2.33 g/cm³ |
| Electron Configuration | [Ne]3s2,p2 |
| Acid/Base Properties | Amphoteric |
| Crystal Structure | Cubic, face centered |
| Electronegativity | 1.90 |
| Heat of Vaporization | 359 kJ/mol |
| Heat of Fusion | 50.2 kJ/mol |
| Electrical Conductivity | 4x10e-4 10^6omg-¹cm-¹ |
| Thermal Conductivity | 148 Wm-¹K-¹ (at 300 K) |
| Specific Heat Capacity | 0.70 Jg-¹K-¹ (at 300 K) |
| First Ionization Potential | 8.151 |
| Atomic Volume | 12.1 cm³/mol |
| Atomic Radius | 1.32 Å |
| Covalent Radius | 1.11 Å |
| Synthetic | No |